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Product Details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
| Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 7 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 81 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 4 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Length | 5mm |
| Width | 4mm |
| Height | 1.5mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 11.7 nC @ 10 V |